This post is about a spreadsheet that computes inductor parameters for the 4LC resonator. There is a download link for the spreadsheet immediately below the the description.
I. 4LC Power Density
To succeed, reversible logic must beat CMOS as an effective technology for some important applications. Reversible logic circuits can use scaled semiconductor processes to skip over CMOS’s learning curve, but the energy recycling power supply will need to compete with CMOS immediately. This section defines the problem and solves it.
This section converts an example CMOS chip to reversible logic. Generally, the reversible logic literature shows how to replace the logic gates in a scaled CMOS design with reversible gates while roughly retaining interconnection wires and their lengths. A final layout would require a lot of additional engineering, but this section uses the rough layout to estimate the energy density of the converted circuit. We then create an energy recycling power supply meeting the estimated energy density using superconducting inductors, including newly available inductors of HKI material.
We start by considering stored energy. Resonators, including 4LC, move energy back and forth between the circuit’s capacitance and the inductor. The capacitance and operating voltage determine an amount of energy ½CV2. An inductor’s energy is ½LI2, and the inductor must be able to hold ½CV2 energy without excessive loss or exceeding its critical current.
Capacitive energy. Let us estimate the capacitance of a reversible logic chip based on converting an exemplary CMOS chip. This section includes expressions for various design values followed by values. Say the exemplary CMOS chip has area A = 1 cm2, power supply voltage Vdd = 1 V, clock rate fCMOS = 1 GHz, dissipation PCMOS = 100 W, and say it is a processor with 50% “dark silicon” (the latter meaning half the chip is effectively unpowered during normal operation).
The textbook equation for CMOS chip power “P = ½CV2 f” allows computation of a starting point for capacitance Cs = 2PCMOS/ (Vdd2fCMOS) = 2E-7 F. Let us add corrections for the following:
- Leakage current caused overestimation of C by ~20%
- 50% dark silicon caused underestimation of C by of 2x
- Divide by four to obtain the capacitance of one clock phase
With corrections, C = (.8) (2) (¼) Cs = 8e-8. This will be the rough estimate for this document, which designers should progressively refine as their design matures.
Energy stored in coils and advanced inductors. If a coil inductor appears too weak, the designer could allocate more space or volume per coil, consider a change of materials, consider one of the superconducting options below, or scale back their expectations for a reversible logic system.
High kinetic inductance (HKI) layers are available for some Niobium-based integrated circuits. Inductance in these materials arises from the momentum of charge carriers, which exceeds “geometric” inductance from a magnetic field by an order of magnitude or more. Furthermore, an HKI inductor does not need empty space for the magnetic field’s energy, so a wire’s length solely determines the inductance. These properties allow fabrication of superconducting inductors with lower loss due to the wire’s superconductivity, higher inductance due to HKI, and of multiple layers.
Niobium superconductors operate at about 4 K, although YBCO has similar properties and operates at 77 K (the boiling point of nitrogen). This document applies to YBCO and other high-Tc inductors as well. Some R&D teams are seeking to create high-Tc superconductors with high kinetic inductance.
Other R&D teams seek to create superinductors. An inductor made from a perfect conductor in vacuum has limits due to the properties of vacuum. A “superinductor” is an inductor of any type that exceeds the vacuum limit. Since HKI uses charge carrier momentum rather than a magnetic field, the properties of vacuum are irrelevant, creating a path for HKI superinductors. There are reports of laboratory measurements on HKI inductors that exceed the vacuum limit.
The 4LC hybrid illustrated in Fig. 1 will benefit from advanced inductors and will benefit from superinductors when they become available. The 4LC hybrid comprises an inductor layer and a semiconductor layer, where the inductor layer contains four copies of an inductor. Each inductor interacts with the capacitance of transistors and wires in a reversible logic circuit. So, let us consider a reversible logic circuit of area A interacting with planar HKI superconducting inductors of area A/4.

We can use the properties of a square of material to estimate the properties of an arbitrarily shaped kinetic inductor. Like resistance per square, the value L□ suffices to characterize HKI inductance. The design principle is that squares of material have the same resistance R□ or inductance L□ when measured between opposing sides – irrespective of the length of the side. Of course, lithography defines the minimum length of a side. A designer can estimate inductance similarly to resistance by dividing a shape into a mesh of inductors of value L□ and using the rule for parallel-series interconnection between inductors, which is the same rule as for resistors.
For representative properties, a semiconductor process [2-Yohannes 24] offers HKI with inductance per square L□ = 8.5 pH/□, w = 0.8 µm minimum width, s = 1 µm minimum spacing, and Ic = 2.5 mA/µm = 2,500 A/m critical current. Thus, the current limit of the narrowest allowable wire is Imax = Icw = 2 mA.
If an HKI inductor under consideration does not have enough energy storage capacity, a foundry may be able to create NL layers, which would increase the energy storage capacity by a factor of NL. Adding layers to a chip normally increases cost, mostly due to increasing the number of lithography layers.
However, some integrated circuit fabs produce flash memory chips with hundreds of layers without a lithography step for each layer. A designer could investigate the availability of an NL-layer HKI inductor.
Maximum current. Next, the designer must make an inductor with enough current carrying capacity. A designer could initially select the peak-to-peak sine wave voltage to equal the recommended Vdd for CMOS circuits. The designer could later refine the initial value through simulation to account for differences in the waveforms presented to transistors by CMOS and reversible logic. In the author’s experience, such refinement changes the optimal voltage by about a third.
With a known sine wave voltage, circuit analysis or simulation will reveal the peak inductor current at the desired operating frequency. Wire big enough to handle the peak current, plus an insulating gap, must fit in the space available.
If the inductor is a coil of normal metal, the designer may be able to trade off wire diameter for the number of turns in the coil, but reducing wire diameter increases resistance that will lower the Q factor.
If the inductor is a wire following a planar path made of an HKI superconducting material, the designer can vary the wire width without changing the insulating gap. This will change the maximum or critical current, and may change the energy storage capacity of the inductive layer.
Let us continue our example to give the reader insight into typical values. Say each inductor will occupy a quarter of the exemplary chip in Fig. 7, AL = A/4. Each inductor of area AL, taken as a square, is large enough for (√AL) / (w+s) = 2,780 parallel wires with the required spacing. The total length of wire will be AL/ (w+s) = 13.9 m. Ignoring corners, the wire will be AL/ (w (w+s)) = 17.4 M squares in length hence inductance AL□ / (w (w+s)) = 148 µH. The textbook formula for energy on an inductor “(½LI2)” yields ½AL□ / (w (w+s)) (Ic w)2 = ½AL□ Ic2w / (w+s) = 295 pJ/inductor at maximum current.
Clock regions. The designer now divides the circuit into NR clock regions of equal area. Each such region should have a statistically similar capacitance and hence use a similar amount of power-clock current. If the designer creates a 4LC circuit for each region, each such circuit will have capacitance and peak current reduced by a factor of NR, but inductance increased by NR. All the 4LC regions would receive the same drive waveforms.
While a 4LC circuit maintains the 90˚ phase between clocks, the designer will need to verify that the coupled 4LC circuits maintain phase accurately enough – including in instances where the circuit’s computation causes uneven loads or crosstalk. For example, reversible logic in one region creating and sending signals to another region, which recovers the signal energy, would create a net flow of energy between regions. This flow would be crosstalk.
Fig. 1 shows an inductor, copied once for each clock phase, such that the aggregate area is the same as the reversible logic circuit. Fig. 7c shows capacitance C1 as the wiring for a clock phase and C0 as a lumped capacitor with an “equivalent capacitance.” C2 and C3 receive similar treatment.
At the design level, the result is replicable layout geometry, or reversible logic IP. A designer can lay out multiple units of IP on a chip surface and they will function properly (given proper connections to power, clocks, and external data).
To continue our example, a 4LC circuit with the exemplary capacitance and resistance values resonates at a frequency fqtr = 65.5 KHz, where fqtr is the frequency for a “quarter chip” inductor.
A simple adjustment to the analysis above would allow us to choose the operating frequency, say fR = 100 MHz. We divide the exemplary chip into NR = fR / fqtr = 1,530 regions, yielding LR = L/NR = 96.7 nH and CR = C/NR = 52.4 pF. The energy flux through the capacitor will be ½CRV2 fR NR = 4 W. The inductor’s stored energy is ½LRImax2 = 0.19 pJ and energy flux ½LRImax2 fR NR = 29 mW.
The inductor’s energy storage capacity falls short by 136x. The designer could build a system with NL = 136 HKI inductance layers or change parameters as indicated in section II below.
II. Using the Spreadsheet for Circuit Modifications
Getting started. The reader should open the associated spreadsheet 4LCWorksheet.xls. The spreadsheet should open to the first tab called “Worksheet.” Column K contains parameter modifications for design space exploration and column L explains the parameter with text of the form “<- explanation of change.” If the reader sets all the parameter modification factors to 1, the spreadsheet will calculate the values described in the previous section – including the need for 136 HKI layers (which is too many for current technology).
If the reader reopens the file, restoring the original parameter modifications, the computed number of required HKI layers will be 1.002 (essentially 1), indicating a feasible design with current technology. The reader will see that the required changes from the previous section comprised:
- Modeling a less computationally intensive chip
- Upping L□ = 11 pH/□, which is a value tested in ref. [2-Yohannes 24].
- Widening the HKI wires, thus allowing more wire and less space.
- Scaling down the reversible logic supply voltage Vp to a value more representative of cryo CMOS.
Other tabs. The spreadsheet is not a polished application, but sheets 2-4 may be useful as a starting point for further development. The sheets apply to HKI, coil, and meander inductors respectively.
Each sheet computes and plots the energy density of an inductor class. When using a display with 4K resolution, clicking on the tabs for sheets 2-4 displays the power density plot in the same part of the display, allowing the user to compare inductor classes easily.
Sheets 3-4 include spreadsheet formulas for computing inductor parameters, with hyperlinks to source documents on the internet. This document described the HKI inductors used in sheet 2.
Further note on HKI inductor design. It is easy to understand the meander inductors in Fig. 1, yet we can improve this design.
Fig. 2 illustrates an improvement. The reader should first notice that diagram has a center section and a boundary. The scaling concept is that the area of the center section scales quadratically while the boundary scales linearly.

The quadratically scaling center section contains wide wires closely spaced, thus maximizing the energy capacity of the HKI material.
However, making the center section into a meander simplistically would require the charger carriers to navigate “hairpin turns,” which would lead to hotspots or localized areas exceeding the critical current density of the HKI material. Fig. 2 widens wires in turns and reducing the sharpness of turns to avoid such hotspots. The geometric constraint is that the turns cannot be as dense as the wires in the center section. The diagram contains sharp artifacts and extraneous lines from the author’s word processing software that would not be part of a final design.
References
[1] [1-ZF013] DeBenedictis, Erik. Scaling up Reversible Logic with HKI Superconducting Inductors, Zettaflops LLC technical report number ZF013. https://zettaflops.org/jj-2025/.
[2] [2-Yohannes 24] Yohannes, Daniel, et al. “Materials and methods for fabricating superconducting quantum integrated circuits.” U.S. Patent No. 11,991,935. 21 May 2024. https://patents.google.com/patent/US11991935B2/en.
The text above is from the pdf file below.